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The "Fully Functional 2D Semiconductor/Silicon-Based Hybrid-Architecture Integrated Flash Memory Chip", developed by Zhou Pengyi and Liu Chunsen’s team from Shaoxin Laboratory, has earned a spot on the National Natural Science Foundation of China’s 2025 "China's Top 10 Scientific Advances". 

Previously, the team had developed its prototype "PoX" 2D flash memory device, achieving an ultrafast storage speed of 400 picoseconds – a record-setting achievement published in Nature.

The team then combined proprietary technology with mature silicon-based processes to develop "Changying (CY-01)", the world's first fully functional hybrid-architecture 2D flash memory chip, which supports 8-bit instruction operations and 32-bit high-speed parallel operations, with an integration yield of 94.3 percent.

Superior to existing flash memory technologies in speed, energy efficiency, and reliability, the innovation offers new solutions to address memory bottlenecks. The findings of the new chip, also published in Nature, are protected by complete proprietary intellectual property rights.

Since its establishment two years ago, Shaoxin Laboratory has rolled out several leading new-generation chips spanning storage, computing, and communications. The lab plans to continue focusing on advanced areas, such as 2D semiconductors, to target breakthroughs in critical core technologies.